RK7002A transistors switching (60v, 300ma) RK7002A ! features 1) low on-resistance. 2) high esd 3) high-speed switching. 4) low-voltage drive (4v). 5) easily designed drive circuits. 6) easy to use in parallel. ! ! ! ! structure silicon n-channel mosfet transistor ! ! ! ! equivalent circuit (1) (3) (2) ? gate protection diode. ? a protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. use the protection circuit when fixed voltages are exceeded. ! ! ! ! external dimensions (units : mm) rohm : sst3 eiaj : sot-23 0.45 0.95 0.15 0~0.1 0.2min. 2.4 1.3 0.4 0.95 ( 1 ) ( 3 ) 0.95 ( 2 ) 1.9 2.9 (1) source (2) gate (3) drain abbreviated symbol : rks each lead has same dimensions ! ! ! ! absolute maximum ratings (ta=25 c) drain-source voltage gate-source voltage drain current drain reverse current total power dissipation channel temperature storage temperature continuous pulsed continuous pulsed v dss v gss i dr p d ? 2 tch 60 v v ma ma mw c 20 300 i d i drp ? 1 a i dp ? 1 a 1.2 300 1.2 200 150 tstg c ? 55~ + 150 symbol limits unit parameter ? 1 pw 10 s, duty cycle 1% ? 2 when using 1 0.75 0.062 inch glass epoxy board.
RK7002A transistors ! ! ! ! electrical characteristics (ta=25 c) parameter test conditions v gs = 0v f = 1mhz v ds = 10v v gs = 10v i d = 150ma, v dd 30v r l = 200 ? r gs = 10 ? a pf ? ms unit v a v pf pf ns ns ns ns nc nc i d = 300ma, v gs = 10v ? ? 60 ? 1 ? 200 min. ? ? ? ? ? ? ? ? 33 ? ? ? ? 0.7 ? typ. 14 9 6 5 13 80 0.5 0.6 ? 10 ? 1 2.5 1.0 i d = 300ma, v gs = 4v ? 1.1 1.5 ? max. ? ? ? ? ? ? ? v ds = 10v, i d = 300ma i d = 10 a, v gs = 0v v gs = 20v, v ds = 0v v ds = 60v, v gs = 0v v ds = 10v, i d = 1ma nc i d = 200ma v gs = 10v ? 36 ? ? 2 pulsed ? 1 p w 300 s, duty cycle 1% i gss i dss l y fs l ? 1 c iss symbol c oss c rss t r ? 2 t f ? 2 q gd ? 2 q gs ? 2 q g ? 2 v (br) dss v gs (th) r ds (on) ? 1 t d (on) ? 2 t d (off) ? 2 v dd 30v gate leakage current drain-source breakdown voltage drain cutoff current gate threshold voltage drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ! ! ! ! packaging specifications RK7002A type t116 3000 package code basic ordering unit (pieces) taping ! ! ! ! electrical characteristic curves 1.2 0.4 0.6 0.8 1.0 0.2 0.0 fig.1 typical output characteristics drain current : i d (a) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 drain-source voltage : v ds (v) vgs = 3v 10v 3.5v 8v 6v 4v ta = 25 c pulsed 0.01 0.1 1 1.0 0.5 0.0 1.5 2.0 2.5 3.0 3.5 4.0 pulsed v ds = 10v ta =? 25 c 25 c 75 c 125 c 0.001 gate-source voltage : v gs (v) fig.2 typical transfer characteristics drain current : i d (a) pulsed v ds = 10v i d = 1ma 2.5 150 ? 50 ? 25 0 1.0 1.5 2.0 0.5 0.0 50 75 100 125 25 channel temperature : tch ( c) gate threshold voltage : v gs (th) (v) fig.3 gate threshold voltage vs. channel temperature
RK7002A transistors pulsed v gs = 10v 10 1.0 0.01 1.0 0.1 0.1 ta = 125 c 75 c ? 25 c 25 c drain current : i d (a) fig.4 static drain-source on-state resistance vs. drain current ( ) static drain-source on-state resistance : r ds (on) ( ? ) pulsed v gs = 4v 10 1.0 0.01 1.0 0.1 0.1 ta = 125 c 75 c ? 25 c 25 c drain current : i d (a) fig.5 static drain-source on-state resistance vs. drain current ( ? ) static drain-source on-state resistance : r ds (on) ( ? ) fig.6 static drain-source on-state resistance vs. gate-source voltage 7 5 6 3 2 1 4 0 0 5 10 15 20 gate-source voltage : v gs (v) on-state resistance : r ds (on) ( ? ) static drain-source ta = 25 c pulsed i d = 300ma 150ma 0.0 0.5 1.0 1.5 2.0 0 ? 25 50 75 100 125 150 static drain-source on-state resistance : r ds (on) ( ? ) channel temperature : tch ( c) fig.7 static drain-source on-state resistance vs. channel temperature ? 50 25 i d = 300ma 150ma v gs = 10v pulsed 0.01 0.1 1 0.4 0.2 0.0 0.6 0.8 1.0 1.2 pulsed v gs = 0v ta = 125 c 75 c 25 c ? 25 c 0.001 source-drain voltage : v sd (v) fig.8 reverse drain current vs. source-drain voltage ( ) reverse drain current : i dr (a) 0.01 0.1 10 1 0.4 0.2 0.0 0.6 0.8 1.0 1.2 pulsed ta = 25 c v gs = 10v 0v 0.001 source-drain voltage : v sd (v) fig.9 reverse drain current vs. source-drain voltage ( ? ) reverse drain current : i dr (a) 1 0.1 0.01 0.001 0.001 0.01 0.1 1 v gs = 10v pulsed fig.10 forward transfer admittance vs. drain current forward transfer admittance : |y fs | (s) drain current : i d (a) ta =? 25 c 25 c ta = 75 c 125 c 100 10 1 0.01 0.1 10 1 100 ta = 25 c f = 1mhz v gs = 0v fig.11 typical capacitance vs. drain-source voltage capacitance : c (pf) drain-source voltage : v ds (v) c iss c oss c rss 1 10 100 1000 1 100 10 1000 switching time : t (ns) drain current : i d (a) fig.12 switching characteristics (see figures 13 and 14 for the measurement circuit and resultant waveforms) ta = 25 c v dd = 30v v gs = 10v r g = 10 ? pulsed t f t d (off) t r t d (on)
RK7002A transistors ! ! ! ! switching characteristics measurement circuit fig.13 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd 90% 50% 10% 90% 10% 50% pulse width 10% v gs v ds 90% t f t off t d (off) t r t on t d (on) fig.14 switching time waveforms
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